Datasheet4U Logo Datasheet4U.com

MJD31C - NPN Transistor

Key Features

  • Designed for general Excellent DC Current Gain Characteristics D-Pack (TO-252).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJD31C NPN Transistor Diodes
MJD31C Silicon NPN Power Transistor Inchange Semiconductor
MJD31C Complementary Power Transistors Kexin
MJD31C COMPLEMENTARY PLASTIC POWER TRANSISTORS CDIL
MJD31C SILICON POWER TRANSISTORS ON

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
MJD32C PNP Epitaxial Silicon Transistor
MJD42C PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente MJD31C 3A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Excellent DC Current Gain Characteristics D-Pack (TO-252) PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A B GE C D Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Range VCBO VCEO VEBO IC PC TJ ,TSTG 100 100 5 3 1.25 150 , -55~150 K HF MJ N O P Millimeter REF. Min. Max. A 6.35 6.8 B 5.20 5.50 C 2.15 2.40 D 0.45 0.58 E 6.8 7.5 F 2.