Datasheet Details
| Part number | MJD31C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.13 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD31C-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | MJD31C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.13 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD31C-InchangeSemiconductor.pdf |
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·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature 100 V 100 V 5 V 3 A 5 A 1 A 15 W 1.56 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.3 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD31C isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD31C | NPN Transistor | SeCoS |
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MJD31C | NPN Transistor | Diodes |
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MJD31C | Complementary Power Transistors | Kexin |
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MJD31C | COMPLEMENTARY PLASTIC POWER TRANSISTORS | CDIL |
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MJD31C | SILICON POWER TRANSISTORS | ON |
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