MJD31C
MJD31C is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistors
DESCRIPTION
- DC Current Gain -hFE = 25(Min)@ IC= 1A
- Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min)
- plement to Type MJD32C
- DPAK for Surface Mount Applications
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general purpose amplifier and low speed switching applications....
