| Part | MJD31C |
|---|---|
| Description | Silicon NPN Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 250.13 KB |
DC Current Gain -hFE = 25(Min)@ IC= 1A - Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) - Complement to Type MJD32C - DPAK for Surface Mount Applications - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| MJD31CUQ | Diodes Incorporated | 100V NPN HIGH VOLTAGE TRANSISTOR |
| MJD31C | Nexperia | 3A NPN transistor |
| MJD31C | Galaxy Microelectronics | Epitaxial Planar NPN Transistor |
| MJD31CQ | Diodes Incorporated | 100V NPN HIGH VOLTAGE TRANSISTOR |
| MJD31C | Continental Device India | COMPLEMENTARY PLASTIC POWER TRANSISTORS |
