Excellent Safe Operating Area
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
Complement to Type MJD2955
DPAK for Surface Mount Applications
Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS
Designed fo
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJD3055
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current
6
A
Collector Power Dissipation@TC=25℃
20
PC
W
Collector Power Dissipation@Ta=25℃ 1.
MJD3055 Datasheet
