Datasheet Details
| Part number | MJD3055 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 251.77 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD3055-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055.
| Part number | MJD3055 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 251.77 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJD3055-InchangeSemiconductor.pdf |
|
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·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·plement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current 6 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.75 Tj Junction Tmperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD3055 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ;
VCE= 4V ICEO Collector Cutoff Current VCE= 30V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD3055 | General Purpose Amplifier | Fairchild |
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MJD3055 | Complementary Silicon Power Transistors | ST Microelectronics |
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MJD3055 | Complementary Power Transistors | ON |
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MJD3055 | SILICON POWER TRANSISTORS | Motorola |
 |
MJD3055 | Epitaxial Planar NPN Transistor | GME |
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