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MJD3055 - Silicon NPN Power Transistor

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Part number MJD3055
Manufacturer Inchange Semiconductor
File Size 251.77 KB
Description Silicon NPN Power Transistor
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Description

Excellent Safe Operating Area Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJD2955 DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Vol

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