MJD3055 Description
·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB=0 ICBO Collector Cutoff Current VCB= 100V;.
MJD3055 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
MJD3055 | General Purpose Amplifier |
STMicroelectronics |
MJD3055 | Complementary Silicon Power Transistors |
ON |
MJD3055 | Complementary Power Transistors |
Motorola Semiconductor |
MJD3055 | SILICON POWER TRANSISTORS |
Galaxy Microelectronics |
MJD3055 | Epitaxial Planar NPN Transistor |
·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB=0 ICBO Collector Cutoff Current VCB= 100V;.