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MJD3055 - Epitaxial Planar NPN Transistor

Key Features

  • Lead formed for surface mount.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Epitaxial Planar NPN Transistor FEATURES  Lead formed for surface mount applications. Pb Lead-free  Straight lead.  Electrically similar to popular MJE3055T.  DC current gain specified to 10A. APPLICATIONS  Low speed switching applications.  D-PAK for surface mount applications. Production specification MJD3055 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current 10 A IB Base Current 6A PC Collector Power Dissipation 20 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)032 Rev.A www.gmesemi.