• Part: MJD3055
  • Description: Epitaxial Planar NPN Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 208.79 KB
Download MJD3055 Datasheet PDF
Galaxy Microelectronics
MJD3055
MJD3055 is Epitaxial Planar NPN Transistor manufactured by Galaxy Microelectronics.
Epitaxial Planar NPN Transistor Features - Lead formed for surface mount applications. Pb Lead-free - Straight lead. - Electrically similar to popular MJE3055T. - DC current gain specified to 10A. APPLICATIONS - Low speed switching applications. - D-PAK for surface mount applications. Production specification TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current 10...