| Part Number | MJD3055 Datasheet |
|---|---|
| Manufacturer | Taitron Components |
| Overview |
MJD3055
Marking Code
MJD3055
VCEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
70
VEBO
Emitter-Base Voltage
5
IC Collector Current Continuous
10
IB Base Current
6
Power Di.
* Designed for general purpose amplifier and low speed switching applications * RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Sym. |
MJD3055 Datasheet and Specifications PDF
The MJD3055 is a SMD Power Transistor.
| Part Number | MJD3055 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD2955/D Complementary Power Transistors • • • • • • MJD2955 PNP MJD3055 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS NPN . ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ Î. |
| Part Number | MJD3055 Datasheet |
|---|---|
| Description | Epitaxial Planar NPN Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Epitaxial Planar NPN Transistor
FEATURES
Lead formed for surface mount applications.
Pb
Lead-free
Straight lead.
Electrically similar to popular MJE3055T.
DC current gain specified to 10.
* Lead formed for surface mount applications. Pb Lead-free * Straight lead. * Electrically similar to popular MJE3055T. * DC current gain specified to 10A. APPLICATIONS * Low speed switching applications. * D-PAK for surface mount applications. Production specification MJD3055 TO-251 TO-25. |
| Part Number | MJD3055 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations fo. sc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD3055 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat. |