The MJD2955 and MJD3055 form complementary PNP-NPN pairs.
They are manufactured using Epitaxial Base technology for cost-effective performance.
| Part number | MJD3055 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 186.35 KB |
| Description | Complementary Silicon Power Transistors |
| Datasheet |
 MJD3055 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| MJD3055 | Silicon NPN Power Transistor | Inchange Semiconductor |
| MJD3055 | General Purpose Amplifier | Fairchild |
| MJD3055 | Complementary Power Transistors | ON |
| MJD3055 | SILICON POWER TRANSISTORS | Motorola |
| MJD3055 | Epitaxial Planar NPN Transistor | GME |
| Part Number | Description |
|---|---|
| MJD31B | Complementary Silicon Power Transistors |
| MJD31C | Low voltage NPN power transistor |
| MJD32B | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD340 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD350 | COMPLEMENTARY SILICON POWER TRANSISTORS |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
