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MJD3055 - SMD Power Transistor

General Description

MJD3055 Marking Code MJD3055 VCEO Collector-Emitter Voltage 60 VCBO Collector-Base Voltage 70 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 10 IB Base Current 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 PD TJ, TSTG Power Dissipation at TA=25°C D

Key Features

  • Designed for general purpose amplifier and low speed switching.

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Datasheet Details

Part number MJD3055
Manufacturer TAITRON
File Size 214.28 KB
Description SMD Power Transistor
Datasheet download datasheet MJD3055 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Power Transistor (NPN) MJD3055 SMD Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD3055 Marking Code MJD3055 VCEO Collector-Emitter Voltage 60 VCBO Collector-Base Voltage 70 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 10 IB Base Current 6 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 *PD TJ, TSTG Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 1.75 0.