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MJD3055T4 - Low voltage NPN power transistor

General Description

The device is manufactured in planar technology with “base island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Surface-mounting DPAK (TO-252) power package in tape and reel.
  • Electrically similar to MJE3055T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD3055T4 Datasheet Low voltage NPN power transistor TAB 23 1 DPAK C 2, TAB 1 B Features • Surface-mounting DPAK (TO-252) power package in tape and reel • Electrically similar to MJE3055T Application • General purpose switching and amplifier Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. E3 Product status link MJD3055T4 Product summary Order code MJD3055T4 Marking MJD3055 Package DPAK Packing Tape and reel DS13694 - Rev 1 - March 2021 For further information contact your local STMicroelectronics sales office. www.st.com MJD3055T4 Electrical ratings 1 Electrical ratings Table 1.