MJD350
MJD350 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector- Emitter Sustaining Voltage-
: VCEO(SUS) = -300 V(Min)
- Low Collector Saturation Voltage-
: VCE(sat) = -1.0V(Max.)@ IC= -50m A
- DPAK for Surface Mount Applications
- plement to Type MJD340
- Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
- Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-300
VCEO
Collector-Emitter Voltage
-300
VEBO
Emitter-Base Voltage
-3
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃
Ti
Junction Temperature
-0.5
-0.75
15...
