MJD350 Overview
PW≤300µs, Duty Cycle≤2% IC = 1mA, IB = 0 VCB = -300.
MJD350 datasheet by Fairchild (now onsemi).
| Part number | MJD350 |
|---|---|
| Datasheet | MJD350_FairchildSemiconductor.pdf |
| File Size | 177.87 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | High Voltage Power Transistor |
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PW≤300µs, Duty Cycle≤2% IC = 1mA, IB = 0 VCB = -300.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJD350 | PNP Epitaxial Silicon Transistor | Kexin |
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MJD350 | 300V PNP HIGH VOLTAGE TRANSISTOR | Diodes |
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MJD350 | SMD Transistor | TAITRON |
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MJD350 | COMPLEMENTARY SILICON POWER TRANSISTORS | ST Microelectronics |
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MJD350 | SILICON POWER TRANSISTORS | Motorola |
View all Fairchild (now onsemi) datasheets
| Part Number | Description |
|---|---|
| MJD3055 | General Purpose Amplifier |
| MJD31 | NPN Epitaxial Silicon Transistor |
| MJD31C | NPN Epitaxial Silicon Transistor |
| MJD32 | General Purpose Amplifier |
| MJD32C | General Purpose Amplifier |
| MJD340 | High Voltage Power Transistors D-PAK |
| MJD122 | NPN Silicon Darlington Transistor |
| MJD127 | PNP Transistor |
| MJD200 | D-PAK |
| MJD210 | PNP Transistor |