MJD350 - High Voltage Power Transistor

Fairchild (now onsemi)

Datasheet Details

Part number	MJD350
Manufacturer	Fairchild (now onsemi)
File Size	177.87 KB
Description	High Voltage Power Transistor
Datasheet	MJD350 Datasheet

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MJD350 MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Storage Temperature Value - 300 - 300 -3 - 0.5 - 0.75 15 1.