| Part Number | MJD350 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | MJD350 MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) 1 D-PAK 1 I-PAK 1.Ba. . |
MJD350 Datasheet and Specifications PDF
The MJD350 is a High Voltage Power Transistor.
| Part Number | MJD350 Datasheet |
|---|---|
| Description | SMD Transistor |
| Manufacturer | Taitron Components |
| Overview |
MJD350
Marking Code
MJD350
VCBO
Collector-Base Voltage
300
VCEO
Collector-Emitter Voltage
300
VEBO
Emitter-Base Voltage
3
IC Collector Current Continuous
500
IC Collector Current Peak
.
* Designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. * RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T . |
| Part Number | MJD350 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD340/D High Voltage Power Transistors DPAK For Surface Mount Applications • • • • • • Designed for line operated audio output amplifie. ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ. |
| Part Number | MJD350 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·DPAK for Surface Mount Applications ·Complement to Type MJD340 . h j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD350 isc Website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Vo. |