Datasheet4U Logo Datasheet4U.com

MJD350 - PNP Epitaxial Silicon Transistor

Key Features

  • Load Formed for Surface Mount.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MJD350 HIGH VOLTAGE PNP TRANSISTOR Diodes
MJD350 Silicon PNP transistor BLUE ROCKET ELECTRONICS
MJD350 SMD Transistor TAITRON
MJD350 High Voltage Power Transistor Fairchild
MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS ST Microelectronics

Other Datasheets by Kexin Semiconductor

Part Number Description
MJD31 Complementary Power Transistors
MJD31C Complementary Power Transistors
MJD32 Complementary Power Transistors
MJD32C Complementary Power Transistors
MJD340 NPN Epitaxial Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors PNP Epitaxial Silicon Transistor MJD350 Features Load Formed for Surface Mount Application Straight Lead +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +1.50 0.15 -0.15 + 0 .1 55 .5 5 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +02.65 .25 -0.1 +00.50 .15 -0.15 +01.50 .28 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25 ) Collector Dissipation (Ta = 25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Rating -300 -300 -3 -0.5 -0.75 15 1.