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MJD350 Datasheet Complementary Silicon Power Transistors

Manufacturer: STMicroelectronics

Overview: MJD340 ® MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MEDIUM VOLTAGE CAPABILITY s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE &.

General Description

The MJD340 and MJD350 form complementary NPN - PNP pairs.

They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor.

3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current (tp = 25 oC) Ptot Total Power Dissipation at Tcase ≤ 25 oC Tstg Storage Temperature Tj Max Operating Junction Temperature For PNP types voltage and current values ar

MJD350 Distributor