MJD31C
MJD31C is 3A NPN transistor manufactured by Nexperia.
description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP plement: MJD32C
2. Features and benefits
- High thermal power dissipation capability
- High energy efficiency due to less heat generation
- Electrically similar to popular MJD31 series
- Low collector emitter saturation voltage
- Fast switching speeds
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Constant current drive backlighting application
- Motor drive
- Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current h FE
DC current gain
Conditions open base single pulse; tp ≤ 1 ms VCE = 4 V; IC = 1 A; Tamb = 25 °C VCE = 4 V; IC = 3 A; Tamb = 25 °C
Min Typ Max Unit
- -
100 V
- -
- -
- 10
- 3
- 50
Nexperia
100 V, 3 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol...
