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MJD31CA - 3A NPN high power bipolar transistor

General Description

NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • Electrically similar to popular MJD31 series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number MJD31CA
Manufacturer Nexperia
File Size 219.48 KB
Description 3A NPN high power bipolar transistor
Datasheet download datasheet MJD31CA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD31CA 100 V, 3 A NPN high power bipolar transistor 23 May 2019 Preliminary data sheet 1. General description NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • AEC-Q101 qualified 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.