MJD32C - 3A PNP high power bipolar transistor

Nexperia

General Description

PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.

Key Features

High thermal power dissipation capability.
High energy efficiency due to less heat generation.
Electrically similar to popular MJD32 series.
Low collector emitter saturation voltage.
Fast switching speeds 3.

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MJD32C 3a pnp high power bipolar transistor by Nexperia - Datasheet Preview

Datasheet Details

Part number	MJD32C
Manufacturer	Nexperia
File Size	218.25 KB
Description	3A PNP high power bipolar transistor
Datasheet	MJD32C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD32C 100 V, 3 A PNP high power bipolar transistor 23 May 2019 Preliminary data sheet 1. General description PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD32 series • Low collector emitter saturation voltage • Fast switching speeds 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick reference data Table 1.