MJD32C
MJD32C is 3A PNP high power bipolar transistor manufactured by Nexperia.
description
PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.
NPN plement: MJD31C
2. Features and benefits
- High thermal power dissipation capability
- High energy efficiency due to less heat generation
- Electrically similar to popular MJD32 series
- Low collector emitter saturation voltage
- Fast switching speeds
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Constant current drive backlighting application
- Motor drive
- Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC collector current ICM peak collector current h FE DC current gain
Conditions open base single pulse; tp ≤ 1 ms VCE = -4 V; IC = -1 A; Tamb = 25 °C VCE = -4 V; IC = -3 A; Tamb = 25 °C
Min Typ Max Unit
- - -100 V
--25 10
- -3 A -5 A 50
Nexperia
100 V, 3 A PNP high power bipolar transistor
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 B base mb
2 C collector
3 E emitter mb C mounting base; connected to collector
DPAK (SOT428)
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