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MJD32C - SMD Power Transistor

General Description

MJD32C Marking Code MJD32C VCEO Collector-Emitter Voltage 100 VCBO Collector-Base Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 3 ICP Collector Current Peak 5 IB Base Current 1 Power Dissipation at TC=25°C PD Derate above 25°C 15 0.12 PD TJ, TSTG

Key Features

  • Designed for general purpose amplifier and low speed switching.

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Datasheet Details

Part number MJD32C
Manufacturer TAITRON
File Size 214.24 KB
Description SMD Power Transistor
Datasheet download datasheet MJD32C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Power Transistor (PNP) MJD32C SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD32C Marking Code MJD32C VCEO Collector-Emitter Voltage 100 VCBO Collector-Base Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 3 ICP Collector Current Peak 5 IB Base Current 1 Power Dissipation at TC=25°C PD Derate above 25°C 15 0.12 *PD TJ, TSTG Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 1.56 0.