MJD32C - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

DC Current Gain -hFE = 25(Min)@ IC= -1A Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) Complement to Type MJD31C DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

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Datasheet Details

Part number	MJD32C
Manufacturer	Inchange Semiconductor
File Size	250.20 KB
Description	Silicon PNP Power Transistor
Datasheet	MJD32C Datasheet

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isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ·Complement to Type MJD31C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications.