Download MJD32C Datasheet PDF
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MJD32C Description

·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ·plement to Type MJD31C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors...