Datasheet Details
| Part number | MJD32C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.20 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJD32C-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C.
| Part number | MJD32C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.20 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJD32C-InchangeSemiconductor.pdf |
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·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= -100V(Min) ·plement to Type MJD31C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -100 V -100 V -5 V -3 A -5 A -1 A 15 W 1.56 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.3 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc Website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD32C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD32C | PNP Transistor | Diodes |
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MJD32C | Silicon PNP epitaxial planer Transistors | MCC |
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MJD32C | Complementary Power Transistors | Kexin |
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MJD32C | COMPLEMENTARY PLASTIC POWER TRANSISTORS | CDIL |
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MJD32C | PNP EPITAXIAL PLANAR TRANSISTOR | Dc Components |
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