• Part: MJD32C
  • Description: Epitaxial Planar PNP Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 124.29 KB
Download MJD32C Datasheet PDF
Galaxy Microelectronics
MJD32C
MJD32C is Epitaxial Planar PNP Transistor manufactured by Galaxy Microelectronics.
FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP32C. z Straight Lead. APPLICATIONS z General purpose amplifier. z Low speed switching applications. Production specification TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage -100 -100 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A ICP Collector Current -Peak -5 A IB Base Current -1 A PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)034 Rev.A .gmicroelec. 1 Production specification Epitaxial Planar PNP Transistor ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN...