MJD31CH-Q Description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
MJD31CH-Q Key Features
- High thermal power dissipation capability
- High energy efficiency due to less heat generation
- High current gain at VCE = 60 V
- Electrically similar to popular MJD31 series
- Low collector emitter saturation voltage
- Fast switching speeds
- Qualified according to AEC-Q101 and remended for use in automotive