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MJD31CH-Q Datasheet 3a NPN High Power Bipolar Transistor

Manufacturer: Nexperia

Overview: MJD31CH-Q 100 V, 3 A NPN high power bipolar transistor 18 May 2021 Product data sheet 1.

Datasheet Details

Part number MJD31CH-Q
Manufacturer Nexperia
File Size 220.09 KB
Description 3A NPN high power bipolar transistor
Datasheet MJD31CH-Q-nexperia.pdf

General Description

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High thermal power dissipation capability.
  • High energy efficiency due to less heat generation.
  • High current gain at VCE = 60 V.
  • Electrically similar to popular MJD31 series.
  • Low collector emitter saturation voltage.
  • Fast switching speeds.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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MJD31CH-Q Distributor