MJD31CH-Q
MJD31CH-Q is 3A NPN high power bipolar transistor manufactured by Nexperia.
description
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
- High thermal power dissipation capability
- High energy efficiency due to less heat generation
- High current gain at VCE = 60 V
- Electrically similar to popular MJD31 series
- Low collector emitter saturation voltage
- Fast switching speeds
- Qualified according to AEC-Q101 and remended for use in automotive applications
3. Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Constant current drive backlighting application
- Motor drive
- Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current h FE
DC current gain
Conditions open base single pulse; tp ≤ 1 ms VCE = 60 V; IC = 20 m A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 4 V; IC = 1 A; pulsed; tp = 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 4 V; IC = 3 A; continuous; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
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100 V
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Nexperia
100 V, 3 A NPN high power bipolar...
