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MJD31C - Epitaxial Planar NPN Transistor

Key Features

  • Low formed for surface mount.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application. Pb Lead-free  Electrically similar to popular and TIP31C.  Straight Lead. APPLICATIONS  General purpose amplifier.  Low speed switching applications. Production specification MJD31C TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 3A ICP Collector Current -Peak 5A IB Base Current 1A PC Collector Power Dissipation 1.25 W Tj ,Tstg Junction and Storage temperature range -65 to +150 ℃ V/(W)033 Rev.A www.gmesemi.