MJD31C
MJD31C is Epitaxial Planar NPN Transistor manufactured by Galaxy Microelectronics.
FEATURES
- Low formed for surface mount application.
Pb
Lead-free
- Electrically similar to popular and TIP31C.
- Straight Lead.
APPLICATIONS
- General purpose amplifier.
- Low speed switching applications.
Production specification
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
100 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
3A
ICP Collector Current -Peak
5A
IB Base Current
1A
PC Collector Power Dissipation
1.25 W
Tj ,Tstg
Junction and Storage temperature range
-65 to +150
℃
V/(W)033 Rev.A
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