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MJD31CQ

Manufacturer: Diodes Incorporated

MJD31CQ datasheet by Diodes Incorporated.

MJD31CQ datasheet preview

MJD31CQ Datasheet Details

Part number MJD31CQ
Datasheet MJD31CQ-Diodes.pdf
File Size 416.67 KB
Manufacturer Diodes Incorporated
Description 100V NPN HIGH VOLTAGE TRANSISTOR
MJD31CQ page 2 MJD31CQ page 3

MJD31CQ Overview

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

MJD31CQ Key Features

  • BVCEO > 100V
  • IC = 3A high Continuous Collector Current
  • ICM = 5A Peak Pulse Current
  • Ideal for Power Switching or Amplification

MJD31CQ Applications

  • Matte Tin Plated Leads, Solderable per

MJD31C from other manufacturers

View MJD31C datasheet index

Brand Logo Part Number Description Other Manufacturers
SeCoS Logo MJD31C NPN Transistor SeCoS
Inchange Semiconductor Logo MJD31C Silicon NPN Power Transistor Inchange Semiconductor
Kexin Logo MJD31C Complementary Power Transistors Kexin
CDIL Logo MJD31C COMPLEMENTARY PLASTIC POWER TRANSISTORS CDIL
ON Logo MJD31C SILICON POWER TRANSISTORS ON
Diodes Incorporated logo - Manufacturer

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