MJD31C - NPN Epitaxial Silicon Transistor

Fairchild (now onsemi)

Key Features

General Purpose Amplifier.
Low Speed Switching.

MJD31C npn epitaxial silicon transistor by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	MJD31C
Manufacturer	Fairchild (now onsemi)
File Size	194.46 KB
Description	NPN Epitaxial Silicon Transistor
Datasheet	MJD31C Datasheet

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Other Datasheets by Fairchild (now onsemi)

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MJD31	NPN Epitaxial Silicon Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD31/31C — NPN Epitaxial Silicon Transistor MJD31/31C NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C February 2012 1 D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : MJD31 : MJD31C VCEO Collector-Emitter Voltage : MJD31 : MJD31C VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Storage Temperature Value 40 100 40 100 5 3 1 1 15 1.