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MJD31C - Low voltage NPN power transistor

General Description

The device is manufactured in planar technology with “base island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Table 1.

Key Features

  • Surface-mounting TO-252 power package in tape and reel.
  • Complementary to the PNP type MJD32C.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJD31C Low voltage NPN power transistor Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C Application ■ General purpose linear and switching equipment Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Datasheet − production data TAB 3 1 DPAK TO-252 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking MJD31CT4 MJD31C Package DPAK June 2012 This is information on a product in full production. Doc ID 3543 Rev 5 Packaging Tape and reel 1/13 www.st.com 13 Electrical ratings 1 Electrical ratings Table 2.