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MJD31B Datasheet Complementary Silicon Power Transistors

Manufacturer: STMicroelectronics

Overview: ® MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICALLY SIMILAR TO TIP31B/C.

General Description

The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs.

They are manufactured using Epitaxial Base technology for cost-effective performance.

DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc = 25 C Storage T emperature Max.

MJD31B Distributor