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MJD32C - PNP Epitaxial Silicon Transistor

General Description

Designed for General Purpose Amplifier and Low Speed Switching Applications Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“ 1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popula

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Elektronische Bauelemente MJD32C -3A, -100V P P Epitaxial Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Designed for General Purpose Amplifier and Low Speed Switching Applications Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series TO-252 (D-Pack) A BC D PACKAGE INFORMATION Package MPQ Leader Size GE TO-252 2.5K 13 inch Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.9 J 2.3 REF. B 4.95 5.