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MMBT2222A - General Purpose Transistor

Key Features

  • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Medium Power Amplification and Switching.

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Full PDF Text Transcription for MMBT2222A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMBT2222A. For precise diagrams, and layout, please refer to the original PDF.

Elektronische Bauelemente MMBT2222A NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES Epitaxial Planar...

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suffix of "-C" specifies halogen & lead-free FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Medium Power Amplification and Switching COLLECTOR 3 1 BASE 2 EMITTER A L 3 Top View 12 BS 3 1 2 VG C D HK J MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 30 40 60 75 5.0 6.0 600 Vdc Vdc Vdc mAdc Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Symbol PD Max Unit 225 mW 1.