Download MMBT3906W Datasheet PDF
MMBT3906W page 2
Page 2
MMBT3906W page 3
Page 3

MMBT3906W Key Features

  • Epitaxial Planar Die Construction
  • plementary NPN Type Available
  • Ideal for Medium Power Amplification and
  • Emitter Voltage Collector
  • Base Voltage Emitter
  • Base Voltage Collector Current
  • Continuous THERMAL CHARACTERISTICS
  • 55 to +150
  • Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0)
  • Base Breakdown Voltage (IC = -10 mAdc, IE = 0)

MMBT3906W Description

Elektronische Bauelemente MMBT3906W PNP Silicon General Purpose Transistor.