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General Purpose Transistor PNP Silicon
M aximum R atings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous
Thermal Characteristics
Characteristics Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature
Symbol
VCEO VCBO VEBO
IC
MMBT3906W
COLLECTOR 3
1 BASE
2 EMITTER
3
1 2
SOT-323(SC-70)
Value -40 -40 -5.0
-200
Unit Vdc Vdc Vdc mAdc
Symbol
PD R qJA TJ,Tstg
Max 150
833 -55 to +150
Unit mW
C/W C
Device Marking
MMBT3906W=2A
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.
MMBT3906W Datasheet
