WEITRON MMBT3906W
General Purpose Transistor
ELECTRICAL CHARACTERISTICS
(TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Off Characteristics Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0) Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc) 1. Device mounted FR4 glass epoxy printed circuit board suing the minimun recommended footprint. 2. Pulse Test:Pulse Width <= 300 µS, Duty Cycle <= 2.0%. V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc WEITRON MMBT3906WELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min On Characteristics (2) DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) (IC= -100 mAdc, VCE= -1.0Vdc) Collector-Emitter Saturation Voltage (2) (IC= -10 mAdc, IB= -1.0mAdc) (IC...