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MMBT3906W

Manufacturer: SeCoS Halbleitertechnologie GmbH

MMBT3906W datasheet by SeCoS Halbleitertechnologie GmbH.

MMBT3906W datasheet preview

MMBT3906W Datasheet Details

Part number MMBT3906W
Datasheet MMBT3906W-SeCoS.pdf
File Size 334.21 KB
Manufacturer SeCoS Halbleitertechnologie GmbH
Description General Purpose Transistor
MMBT3906W page 2 MMBT3906W page 3

MMBT3906W Overview

Elektronische Bauelemente MMBT3906W PNP Silicon General Purpose Transistor.

MMBT3906W Key Features

  • Epitaxial Planar Die Construction
  • plementary NPN Type Available
  • Ideal for Medium Power Amplification and
  • Emitter Voltage Collector
  • Base Voltage Emitter
  • Base Voltage Collector Current
  • Continuous THERMAL CHARACTERISTICS
  • 55 to +150
  • Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0)
  • Base Breakdown Voltage (IC = -10 mAdc, IE = 0)

MMBT3906W from other manufacturers

View MMBT3906W datasheet index

Brand Logo Part Number Description Other Manufacturers
Rectron Logo MMBT3906W Plastic-Encapsulate Transistors Rectron
UPM Logo MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR UPM
Kexin Logo MMBT3906W General Purpose Transistor Kexin
Pan Jit International Logo MMBT3906W PNP GENERAL PURPOSE SWITCHING TRANSISTOR Pan Jit International
WEITRON Logo MMBT3906W General Purpose Transistor WEITRON
SeCoS Halbleitertechnologie GmbH logo - Manufacturer

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