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MMBT3906W - General Purpose Transistor

Key Features

  • RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free.
  • Epitaxial Planar Die Construction.
  • Complementary NPN Type Available (MMBT3904W).
  • Ideal for Medium Power Amplification and Switching "Lead free is available" A L.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente MMBT3906W PNP Silicon General Purpose Transistor FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Epitaxial Planar Die Construction · Complementary NPN Type Available (MMBT3904W) · Ideal for Medium Power Amplification and Switching "Lead free is available" A L COLLECTOR 3 3 Top View BS 1 BASE 2 EMITTER 1 2 SC-70 SOT-323 V D MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and