MMBT3906W Description
Elektronische Bauelemente MMBT3906W PNP Silicon General Purpose Transistor.
MMBT3906W Key Features
- Epitaxial Planar Die Construction
- plementary NPN Type Available
- Ideal for Medium Power Amplification and
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous THERMAL CHARACTERISTICS
- 55 to +150
- Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0)
- Base Breakdown Voltage (IC = -10 mAdc, IE = 0)