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MMBT3906FW - PNP Silicon General Purpose Transistor

Key Features

  • Epitaxial Planar Die Construction.
  • Complementary NPN Type Available (MMBT3904FW).
  • Ideal for Medium Power Amplification and Switching RoHS Compliant Product A L Top View BS.

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Elektronische Bauelemente MMBT3906FW PNP Silicon General Purpose Transistor FEATURES · Epitaxial Planar Die Construction · Complementary NPN Type Available (MMBT3904FW) · Ideal for Medium Power Amplification and Switching RoHS Compliant Product A L Top View BS COLLECTOR 3 3V 1 BASE 1 2 SOT-523 D 2 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 4 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT3906FW = 3N, 2A Symbol VCEO VCBO VEBO