MMBT3906FW Description
Elektronische Bauelemente MMBT3906FW PNP Silicon General Purpose Transistor.
MMBT3906FW Key Features
- Epitaxial Planar Die Construction
- plementary NPN Type Available
- Ideal for Medium Power Amplification and
- Emitter Voltage
- Base Voltage
- Base Voltage
- Continuous
- 55 to +150
- Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0)
- Collector