SeCoS Halbleitertechnologie GmbH MMBT3906
PNP Plastic Encapsulated Transistor
FEATURES
Collector current capability IC=-200mA Collector-emitter voltage VCEO=-40V. SOT-23 APPLICATION General switching and amplification. PACKAGING DIMENSION Collector● Base Emitter MARKING A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. 2.80 2.25 1.20 Max. 3.00 2.55 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation FR-5 Board(1), TA=25°C Total Device Dissipation FR-5 Board, Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina