Infineon Technologies MMBT3906
PNP Silicon Switching Transistor
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 71°C, SOT23, MMBT3906 TS ≤ 115°C, SOT363, MMBT3906S TS ≤ 107°C, SC74, MMBT3906U Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 6 200 330 250 330 150 -65 ... 150