PANJIT International MMBT3906W
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
FEATURES
● PNP epitaxial silicon, planar design● Collector-emitter voltage VCE = -40V
● Collector current IC = -200mA
● Lead free in compliance with EU RoHS 2011/65/EU directive
● Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
● Case: SOT-323, Plastic● Terminals: Solderable per MIL-STD-750, Method 2026
● Apporx. Weight: 0.0001 ounce, 0.005 gram
● Marking: S2A ABSOLUTE RATINGS Collector - Emitter Voltage Parameter Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Note : 1. Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. March 30,2015-REV.03 Symbol VCEO VCBO VEBO IC Value -40 -40 -5 -200 Units V V V mA Symbol PTOT RθJA TJ TSTG Value 150 830 -55 to 150 -55 to 150 Units mW OC/W OC OC PAGE . 1 MMBT3906W
ELECTRICAL CHARACTERISTICS
Parameter Collector - Emitter Breakdown Vo l t a g...