MMBTA14 Key Features
- hFE(2)
- VCE (sat)
- VEB= 10V , IC=0 VCE=5V, IC= 10mA VCE=5V, IC= 100mA
- VCE=5V,IC= 100mA
- Pulse Test : pulse width≤300μs，duty cycle≤2%。
- RθJCąTJ(pk)
- TC = P(pk) ZθJC(t) ZθJA(t) = r(t)
- RθJAąTJ(pk)
- TA = P(pk) ZθJA(t)
- Part: MMBTA14
- Manufacturer: SeCoS Halbleitertechnologie GmbH (official site)
- Size: 321.96 KB
Other MMBTA14 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Galaxy Microelectronics |
MMBTA14 | NPN Darlington Amplifier Transistor |
Samsung Semiconductor |
MMBTA14 | NPN DARLINGTON AMPLIFIER TRANSISTOR |
Fairchild |
MMBTA14 | NPN Darlington Transistor |
Diodes Incorporated |
MMBTA14 | NPN SURFACE MOUNT DARLINGTON TRANSISTOR |
Micro Commercial Components |
MMBTA14 | NPN Darlington Amplifier Transistor |
MMBTA14 Description
Elektronische Bauelemente MMBTA13 MMBTA14 Darlington Amplifier Transistor NPN Silicon RoHS pliant Product A suffix of "-C" specifies halogen & lead-free 3 1 2 COLLECTOR 3 BASE 1 EMITTER 2 A L 3 BS 12.