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MMBTA14 - Darlington Amplifier Transistor NPN Silicon

Download the MMBTA14 datasheet PDF. This datasheet also covers the MMBTA13 variant, as both devices belong to the same darlington amplifier transistor npn silicon family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • C Power dissipation D PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBTA13-SeCoS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for MMBTA14 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMBTA14. For precise diagrams, and layout, please refer to the original PDF.

Elektronische Bauelemente MMBTA13 MMBTA14 Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3 1 2 COLLECTO...

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Product A suffix of "-C" specifies halogen & lead-free 3 1 2 COLLECTOR 3 BASE 1 EMITTER 2 A L 3 BS 12 VG FEATURES C Power dissipation D PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.