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MMBTA14 - NPN Darlington Amplifier Transistor

Download the MMBTA14 datasheet PDF. This datasheet also covers the MMBTA13 variant, as both devices belong to the same npn darlington amplifier transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Epitaxial planar die construction.
  • Complementary PNP type available Pb Lead-free (MMBTA63/MMBTA64).
  • High current gain.
  • MSL 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBTA13-GME.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MMBTA14 NPN DARLINGTON AMPLIFIER TRANSISTOR Samsung
MMBTA14 NPN Darlington Transistor Fairchild
MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Diodes Incorporated
MMBTA14 NPN Darlington Amplifier Transistor Micro Commercial Components
MMBTA14 NPN Silicon Darlington Transistors Infineon Technologies AG

Other Datasheets by Galaxy Microelectronics

Part Number Description
MMBTA13 NPN Darlington Amplifier Transistor
MMBTA05 NPN General Purpose Transistor
MMBTA06 NPN General Purpose Transistor
MMBTA42 NPN High Voltage Amplifier
MMBTA43 NPN High Voltage Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification NPN Darlington Amplifier Transistor FEATURES  Epitaxial planar die construction.  Complementary PNP type available Pb Lead-free (MMBTA63/MMBTA64).  High current gain.  MSL 1 APPLICATIONS  Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking MMBTA13 MMBTA14 K2D K3D MMBTA13/MMBTA14 SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO collector-base voltage MMBTA13 MMBTA14 VCEO collector-emitter voltage MMBTA13 MMBTA14 VEBO emitter-base voltage IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value 30 30 30 30 10 0.3 0.