Infineon Technologies MMBTA14
NPN Silicon Darlington Transistors
MAXIMUM RATINGS
Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 81 °C Junction temperature Storage temperature VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg 30 30 10 300 500 100 200 330 150 -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 210 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-12-19 SMBTA14/MMBTA14ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. ty