Datasheet Summary
Elektronische Bauelemente
115mA, 60V N-Channel Enhancement Mode Power MOSFET
Features
Low on resistance. Fast switching speed. Low-voltage drive. Easily designed drive circuits. Easy to parallel. Pb-Free package is available. ESD protected:2000V
DEVICE MARKING: RK
RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free
3 DRAIN
1 GATE
- - Gate Pretection Diode
SOURCE 2
SOT-23
Top View
D F GH
3 2
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max.
- 0.18 0.40 0.60 0.08 0.20
0.6 REF. 0.85 1.15
MAXIMUM RATINGS (TA = 25°C unless otherwise...