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SCG4153 SeCoS N-Channel Enhancement Mode MOSFET

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Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING N3 = Date Code SOT-523 A M 3 Top View CB 1 2 K L E ...
Features ge Continuous Drain Current 1 TA= 25°C TA= 70°C Power Dissipation 1 TA= 25°C TA= 70°C Continuous Drain Current 2 TA= 25°C TA= 70°C Power Dissipation 2 Pulsed Drain Current 3 TA= 25°C TA= 70°C Lead Temperature Operating Junction & Storage Temperature Range VDS VGS ID PD ID PD IDM TL TJ, TSTG Rating 10S Steady State 20 ±6 0.88 0.8 ...

Datasheet PDF File SCG4153 Datasheet - 677.75KB
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