| Part | SCG4153 |
|---|---|
| Description | N-Channel Enhancement Mode MOSFET |
| Category | MOSFET |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Size | 677.75 KB |
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage.
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