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SCG4153 - N-Channel Enhancement Mode MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Overview

Elektronische Bauelemente SCG4153 0.8A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and.