SCP60N03S-C Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION SCP60N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. DFN3x3-8J FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special processing technology for high ESD capability APPLICATIONS Hard Switched and High Frequency Circuits SMPS and general purpose applications MARKING CJAB 60N03 = Production Line Indication PACKAGE INFORMATION Package DFN3x3-8J 5K Leader Size 13 inch ORDER INFORMATION Part Number Type SCP60N03S-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TC=25°C Pulsed Drain Current Single Pulse Avalanche Energy 2 Power Dissipation TA=25°C PD TC=25°C Thermal Resistance from Junction to Ambient 1 RθJA Thermal Resistance from Junction to Case...