SCP35N03J-C Description
SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications DFN3x3-8J.
SCP35N03J-C Key Features
- High density cell design for ultra low RDS(ON)
- Fully Characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special processing technology for high ESD capability
SCP35N03J-C Applications
- High density cell design for ultra low RDS(ON)