SCP35N03J-C Overview
Elektronische Bauelemente SCP35N03J-C 35A, 30V, RDS(ON) 7m N-Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications DFN3x3-8J FEATURES High density cell design for ultra low RDS(ON) Fully Characterized avalanche voltage and current Good...
SCP35N03J-C Key Features
- High density cell design for ultra low RDS(ON)
- Fully Characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special processing technology for high ESD capability
SCP35N03J-C Applications
- High density cell design for ultra low RDS(ON)