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SDT2P02-C - Dual-P Enhancement Mode MOSFET

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation.

Features

  • Low RDS(on) Trench Technology Low Thermal Impedance Fast Switching Speed.

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Datasheet preview – SDT2P02-C

Datasheet Details

Part number SDT2P02-C
Manufacturer SeCoS
File Size 217.29 KB
Description Dual-P Enhancement Mode MOSFET
Datasheet download datasheet SDT2P02-C Datasheet
Additional preview pages of the SDT2P02-C datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SDT2P02-C -2.2A, -20V, RDS(ON) 200mΩ Dual-P Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation. DFN2x2-6L-J FEATURES Low RDS(on) Trench Technology Low Thermal Impedance Fast Switching Speed APPLICATIONS Battery-Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players MARKING 2P02 = Date Code PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 1.90 2.10 1.90 2.10 0.675 0.80 0.25 0.35 0.75 1.10 0.65 TYP. REF. G H J K L P Millimeter Min. Max. 0.25 0.35 0.
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