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SDT2P03-C - Dual-P Enhancement Mode MOSFET

Key Features

  • Low RDS(ON) Trench Technology Low Thermal Impedance Fast Switching Speed DFN2x2-6L-J.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SDT2P03-C -2.4A, -30V, RDS(O ) 120mΩ Dual-P Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES Low RDS(ON) Trench Technology Low Thermal Impedance Fast Switching Speed DFN2x2-6L-J APPLICATIONS Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players MARKING 2P03 = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SDT2P03-C Lead (Pb)-free and Halogen-free REF. A B C D E F Millimeter Min. Typ. Max. 1.924 2.00 2.076 1.924 2.00 2.076 0.675 0.75 0.80 0.25 0.30 0.35 0.75 0.86 1.10 0.65 TYP. REF. G H J K L P Millimeter Min. Typ. Max. 0.25 0.30 0.35 0.20 BSC. 0 - 0.06 0.15 0.20 0.25 0.20 0.30 0.