SDT3A5N06-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente SDT3A5 06-C 3.5A, 60V, RDS(O ) 100 mΩ -Channel Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3A5N06 . = Date code PACKAGE INFORMATION Package DFN2×2-6J 3K Leader Size 7...