Datasheet4U Logo Datasheet4U.com

SDT3N03 - Dual-N Enhancement Mode MOSFET

Key Features

  • Low RDS(on) trench technology Low thermal impedance Fast switching speed DFN2x2-6L-J.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SDT30100CT TRENCH SCHOTTKY RECTIFIER Diodes
SDT30100CTFP TRENCH SCHOTTKY RECTIFIER Diodes
SDT30100GCT 30A TRENCH SCHOTTKY RECTIFIER DIODES
SDT30100GCTFP 30A TRENCH SCHOTTKY RECTIFIER DIODES
SDT30120CT 30A TRENCH SCHOTTKY RECTIFIER DIODES

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SDT3005 N-Channel MOSFET
SDT3A5N06-C N-Channel Enhancement Mode Power MOSFET
SDT3P02-C Dual-P Enhancement Mode MOSFET
SDT1216 P-Channel MOSFET
SDT2P02 Dual P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SDT3N03 3.5A, 30V, RDS(ON) 55 mΩ Dual-N Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed DFN2x2-6L-J APPLICATIONS Battery-powered instruments Portable Computing Mobile Phones GPS Units and Media Players PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Typ. Max. 2.00 BSC. 2.00 BSC. 0.675 0.75 0.80 0.30 Typ. 0.75 0.86 1.1 0.65BSC REF. G H J K L P Millimeter Min. Typ. Max. 0.30 BSC 0.20 BSC 0 -- 0.06 0.15 0.20 0.25 0.20 0.30 0.38 0.52 0.65 0.