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SDT1216 - P-Channel MOSFET

General Description

The SDT1216 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

2-6J package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such a

Key Features

  • Lower Gate Charge.
  • Simple Drive Requirement.
  • Fast Switching Characteristic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SDT1216 -16A , -12V , RDS(ON) 21 m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SDT1216 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6J package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. DFN2*2-6J FEATURES  Lower Gate Charge  Simple Drive Requirement  Fast Switching Characteristic MARKING 1216 PACKAGE INFORMATION Package MPQ DFN2*2-6L 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.