SDT2P02-C Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente -2.2A, -20V, RDS(ON) 200mΩ Dual-P Enhancement Mode MOSFET RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation. DFN2x2-6L-J Features Low RDS(on) Trench Technology Low Thermal Impedance Fast Switching Speed APPLICATIONS Battery-Powered Instruments Portable puting Mobile Phones GPS Units and Media Players MARKING 2P02 = Date Code PACKAGE INFORMATION Package DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 1.90 2.10 1.90 2.10...