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SDT3005 Datasheet Preview

SDT3005 Datasheet

N-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SDT3005
5A, 30V, RDS(ON) 42 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SDT3005 provides designers with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
DFN2*2-6J package is universally preferred for
all commercial-industrial surface mount applications
and suited for low voltage applications such as
DC/DC converters.
DFN2*2-6J
FEATURES
TrenchFET power MOSFET
Low RDS(on)
Typical ESD protection
APPICTIONS
Load switch and battery protection
MARKING
3005
PACKAGE INFORMATION
Package
MPQ
DFN2*2-6J
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
1.924 2.076
1.924 2.076
0.46 0.66
0.65 TYP.
0.20 0.40
0.80 1.00
0.174 0.326
REF.
H
I
J
K
L
M
Millimeter
Min. Max.
0.20
-
0.85 1.05
0.70 0.90
0.20 0.40
0.203REF
0.00 0.05
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Thermal Resistance from Junction to Ambient
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
RθJA
TJ, TSTG
Rating
30
±10
5
20
250
150, -55~150
Unit
V
V
A
A
°C / W
°C
http://www.SeCoSGmbH.com/
01-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SDT3005 Datasheet Preview

SDT3005 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SDT3005
5A, 30V, RDS(ON) 42 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
BVDSS
IGSS
30
-
--
- ±10
Drain-Source Leakage Current
Gate-Threshold Voltage 2
Forward Transconductance 2
Diode Forward Voltage 2
IDSS
VGS(th)
gfs
VSD
-
0.6
-
-
-
-
15
-
1
1
-
1
Static Drain-Source On-Resistance 2
RDS(ON)
-
-
- 42
- 44
- - 50
Dynamic Characteristics
Input Capacitance
Output Capacitance
Ciss - 245 -
Coss
-
35
-
Reverse Transfer Capacitance
Crss
-
20
Switching Characteristics
-
Total Gate Charge
Gate-Source Charge
Qg - 10 -
Qgs - 0.5 -
Gate-Drain Charge
Qgd - 1 -
Turn-On Delay Time
Rise Time
Td(on)
-
2
-
Tr - 3.5 -
Turn-Off Delay Time
Td(off)
-
22
-
Fall Time
Tf -
Notes:
1. Repetitive ratingPulse width limited by junction temperature.
2. Pulse Test: Pulse With300µs, duty cycle2%.
3.5
-
Unit Test Condition
V VGS=0, ID=250µA
µA VGS= ±10V, VDS=0
µA VDS=30V, VGS=0
V VDS=VGS, ID=250µA
S VDS=5V, ID=4A
V IS=1A, VGS=0
VDS=10V, ID=5A
mVDS=4.5V, ID=5A
VGS=2.5V, ID=4A
VDS=15V
pF VGS=0V
f=1MHz
ID=4A
nC VDS=15V
VGS=10V
VDD=15V
nS
VGS=10V
RL= 3.75
RGEN=3
http://www.SeCoSGmbH.com/
01-Jul-2016 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SDT3005
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 3 Pages
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