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SGM1N25E Datasheet Preview

SGM1N25E Datasheet

N-CHANNEL MOSFET

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Elektronische Bauelemente
SGM1N25E
1A, 250V, RDS(ON) 1.78
N-Channel Enhancement Mode MOSFET
FEATURES
Low Gate Charge
Simple Drive Requirement
Green Device Available
ESD susceptibility 2KV
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
MARKING
SOT-89
4
123
A
E
C
PACKAGE INFORMATION
Package
MPQ
SOT-89
3K
Leader Size
7 inch
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.30 4.70
3.94 4.40
1.30 1.70
2.25 2.70
1.50 1.85
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.46
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@ VGS=10V 1
TA=25°C
ID
TA=70°C
Pulsed Drain Current 2
IDM
Total Power Dissipation 3
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Resistance Rating
Thermal Resistance from Junction to Ambient 1
RθJA
Rating
250
±20
1
0.8
4
3.5
-55~150
35
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
07-Jul-2015 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SGM1N25E Datasheet Preview

SGM1N25E Datasheet

N-CHANNEL MOSFET

No Preview Available !

Elektronische Bauelemente
SGM1N25E
1A, 250V, RDS(ON) 1.78
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Test Condition
Drain-Source Breakdown Voltage
BVDSS
250
-
-
V
VGS=0, ID=250µA
Breakdown Voltage Temperature
Coefficient
BVDSS /TJ
-
0.3
-
V/°C Reference to 25°C, I D=1mA
Gate-Threshold Voltage
VGS(th)
1.5
-
3.5
V
VDS=VGS, ID=250µA
Forward Transconductance
gfs
-
1.8
-
S
VDS=15V, ID=1A
Gate-Source Leakage Current
IGSS
-
-
±10
µA
VGS=±20V
Drain-Source Leakage
Current
TJ=25°C
TJ=85°C
Static Drain-Source On-Resistance 2
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (‘’Miller’’)Charge
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
-
-
1
-
-
25
-
-
1.78
-
4.47
-
-
1
-
-
1.45
-
-
11.8
-
-
10.7
-
-
12.9
-
-
6.9
-
µA
VDS=200V, VGS=0
VGS=10V, ID=1A
VDS=200V
nC
VGS=10V
ID=1A
VDD=125V
nS
VGS=10V
RG=6
ID=1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
214
-
VDS=25V
Coss
-
16.2
-
pF
VGS=0V
Crss
-
8
-
f=1MHz
Source-Drain Diode
Diode Forward Voltage 2
VSD
-
0.8
1.2
V
IS=1A, VGS=0, TJ=25°C
Reverse Recovery Time
Reverse Recovery Charge
Trr
-
78
-
nS
IF=1A, dI/dt=100A/µs, TJ=25°C
Qrr
-
325
-
nC
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper ,t5sec , 62.5/W at steady state.
2. The data tested by pulsed , pulse width300µs, duty cycle2%.
3. The power dissipation is limited by 150 °C junc tion temperature.
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
07-Jul-2015 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4



Part Number SGM1N25E
Description N-CHANNEL MOSFET
Maker SeCoS
Total Page 3 Pages
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