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SGM2306 - N-Channel MOSFET

Description

RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is universally used for all commercial-industrial applicatio

Features

  • Capable Of 2.5V Gate Drive.
  • Lower On-Resistance D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52.

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Datasheet Details

Part number SGM2306
Manufacturer SeCoS
File Size 477.43 KB
Description N-Channel MOSFET
Datasheet download datasheet SGM2306 Datasheet

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Full PDF Text Transcription

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SGM2306 Elektronische Bauelemente 5.3A, 20V,RDS(ON) 32m N-Channel Enhancement Mode Power Mos.FET Description RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 The SGM2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SGM2306 is universally used for all commercial-industrial applications. Features * Capable Of 2.5V Gate Drive * Lower On-Resistance D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,3VGS@4.5V Continuous Drain Current,3VGS@4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.
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